Ferromagnetism in transition-metal-doped semiconducting oxide thin films
Identifieur interne : 008C15 ( Main/Repository ); précédent : 008C14; suivant : 008C16Ferromagnetism in transition-metal-doped semiconducting oxide thin films
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Abstract
A rather complete work on transition-metal (TM)-doped TiO2 thin films has been done and room ferromagnetism (FM) is found in the whole series of Sc/V/Cr/Mn/Fe/Co/Ni-doped TiO2 films. Not only is it remarkable that for the first time, FM at high temperature was achieved in TM-doped TiO2, but also a very big magnetic moment of 4.2μB/atom could be obtained, and direct evidences of real ferromagnets with big domains were shown as well. A similar chemical trend was achieved in TM-doped In2O3 films, however, the observed magnetic moment is rather modest, with the maximal value is of only 0.7μB/atom for Ni-doped In2O3 films. As regards TM-doped SnO2 films, observed magnetic moments could be very large, with the maximum saturation of 6μB per impurity atom for Cr-doped SnO2 thin films, but it could be influenced very much depending on substrate types. On the other hand, results on TM-doped ZnO films interestingly have revealed that in these systems, the magnetism more likely resulted from defects and/or oxygen vacancies.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ferromagnetism in transition-metal-doped semiconducting oxide thin films</title><author><name>NGUYEN HOA HONG</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS/CEA, Université F. Rabelais Parc de Grandmont</s1><s2>37200 Tours</s2><s3>FRA</s3><sZ>1 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Centre</region><settlement type="city">Tours</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0516082</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0516082 INIST</idno><idno type="RBID">Pascal:06-0516082</idno><idno type="wicri:Area/Main/Corpus">008600</idno><idno type="wicri:Area/Main/Repository">008C15</idno></publicationStmt><seriesStmt><idno type="ISSN">0304-8853</idno><title level="j" type="abbreviated">J. magn. magn. mater.</title><title level="j" type="main">Journal of magnetism and magnetic materials</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Defects</term><term>Doping</term><term>Ferromagnetic materials</term><term>Ferromagnetism</term><term>II-VI semiconductors</term><term>Impurities</term><term>Indium oxides</term><term>Magnetic moments</term><term>Magnetization</term><term>Semimagnetic semiconductors</term><term>Thin films</term><term>Tin oxides</term><term>Titanium oxides</term><term>Transition element additions</term><term>Vacancies</term><term>Zinc oxides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Ferromagnétisme</term><term>Addition métal transition</term><term>Aimantation</term><term>Défaut</term><term>Lacune</term><term>Moment magnétique</term><term>Dopage</term><term>Impureté</term><term>Zinc oxyde</term><term>Couche mince</term><term>Titane oxyde</term><term>Semiconducteur semimagnétique</term><term>Indium oxyde</term><term>Etain oxyde</term><term>Matériau ferromagnétique</term><term>Semiconducteur II-VI</term><term>TiO2</term><term>In2O3</term><term>SnO2</term><term>ZnO</term><term>7570A</term><term>7550P</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A rather complete work on transition-metal (TM)-doped TiO<sub>2</sub> thin films has been done and room ferromagnetism (FM) is found in the whole series of Sc/V/Cr/Mn/Fe/Co/Ni-doped TiO<sub>2</sub> films. Not only is it remarkable that for the first time, FM at high temperature was achieved in TM-doped TiO<sub>2</sub>, but also a very big magnetic moment of 4.2μ<sub>B</sub>/atom could be obtained, and direct evidences of real ferromagnets with big domains were shown as well. A similar chemical trend was achieved in TM-doped In<sub>2</sub>O<sub>3</sub> films, however, the observed magnetic moment is rather modest, with the maximal value is of only 0.7μ<sub>B</sub>/atom for Ni-doped In<sub>2</sub>O<sub>3</sub> films. As regards TM-doped SnO<sub>2</sub> films, observed magnetic moments could be very large, with the maximum saturation of 6μ<sub>B</sub> per impurity atom for Cr-doped SnO<sub>2</sub> thin films, but it could be influenced very much depending on substrate types. On the other hand, results on TM-doped ZnO films interestingly have revealed that in these systems, the magnetism more likely resulted from defects and/or oxygen vacancies.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0304-8853</s0></fA01><fA02 i1="01"><s0>JMMMDC</s0></fA02><fA03 i2="1"><s0>J. magn. magn. mater.</s0></fA03><fA05><s2>303</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Ferromagnetism in transition-metal-doped semiconducting oxide thin films</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 6th International Symposium on Physics of Magnetic Materials (ISPMM 2005), 13-16 September 2005, Singapore</s1></fA09><fA11 i1="01" i2="1"><s1>NGUYEN HOA HONG</s1></fA11><fA12 i1="01" i2="1"><s1>LIU (Bo)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>LI (Kebin)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>ZHOU (Tiejun)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS/CEA, Université F. Rabelais Parc de Grandmont</s1><s2>37200 Tours</s2><s3>FRA</s3><sZ>1 aut.</sZ></fA14><fA15 i1="01"><s1>Data Storage Institute</s1><s2>Singapore 117 608</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA15><fA20><s1>338-343</s1></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>17230</s2><s5>354000115478180130</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>27 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0516082</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of magnetism and magnetic materials</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>A rather complete work on transition-metal (TM)-doped TiO<sub>2</sub> thin films has been done and room ferromagnetism (FM) is found in the whole series of Sc/V/Cr/Mn/Fe/Co/Ni-doped TiO<sub>2</sub> films. Not only is it remarkable that for the first time, FM at high temperature was achieved in TM-doped TiO<sub>2</sub>, but also a very big magnetic moment of 4.2μ<sub>B</sub>/atom could be obtained, and direct evidences of real ferromagnets with big domains were shown as well. A similar chemical trend was achieved in TM-doped In<sub>2</sub>O<sub>3</sub> films, however, the observed magnetic moment is rather modest, with the maximal value is of only 0.7μ<sub>B</sub>/atom for Ni-doped In<sub>2</sub>O<sub>3</sub> films. As regards TM-doped SnO<sub>2</sub> films, observed magnetic moments could be very large, with the maximum saturation of 6μ<sub>B</sub> per impurity atom for Cr-doped SnO<sub>2</sub> thin films, but it could be influenced very much depending on substrate types. On the other hand, results on TM-doped ZnO films interestingly have revealed that in these systems, the magnetism more likely resulted from defects and/or oxygen vacancies.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70E70A</s0></fC02><fC02 i1="02" i2="3"><s0>001B70E50P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Ferromagnétisme</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Ferromagnetism</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Addition métal transition</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Transition element additions</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Aimantation</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Magnetization</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Défaut</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Defects</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Lacune</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Vacancies</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Moment magnétique</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Magnetic moments</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Dopage</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Doping</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Doping</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Impureté</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Impurities</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Zinc oxyde</s0><s2>NK</s2><s5>11</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Zinc oxides</s0><s2>NK</s2><s5>11</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Couche mince</s0><s5>16</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Thin films</s0><s5>16</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Titane oxyde</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Titanium oxides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur semimagnétique</s0><s5>18</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semimagnetic semiconductors</s0><s5>18</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Indium oxyde</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Indium oxides</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Etain oxyde</s0><s2>NK</s2><s5>20</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Tin oxides</s0><s2>NK</s2><s5>20</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Matériau ferromagnétique</s0><s5>21</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Ferromagnetic materials</s0><s5>21</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0><s5>48</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>II-VI semiconductors</s0><s5>48</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>TiO2</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>In2O3</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>SnO2</s0><s4>INC</s4><s5>54</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>55</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>7570A</s0><s4>INC</s4><s5>60</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>7550P</s0><s4>INC</s4><s5>61</s5></fC03><fN21><s1>338</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>ISPMM 2005 International Symposium on Physics of Magnetic Materials</s1><s2>6</s2><s3>Singapore SGP</s3><s4>2005-09-13</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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